EconPapers    
Economics at your fingertips  
 

Low-force pulse switching of ferroelectric polarization enabled by imprint field

Yuchao Zhang, Shanzheng Du, Xiaochi Liu, Yahua Yuan, Yumei Jing, Tian Tian (), Junhao Chu, Fei Xue (), Kai Chang and Jian Sun ()
Additional contact information
Yuchao Zhang: Central South University
Shanzheng Du: Central South University
Xiaochi Liu: Central South University
Yahua Yuan: Central South University
Yumei Jing: Central South University
Tian Tian: Fudan University
Junhao Chu: Fudan University
Fei Xue: Zhejiang University
Kai Chang: Zhejiang University
Jian Sun: Central South University

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Beyond conventional electrical modulation, flexoelectricity enables mechanical control of ferroelectric polarizations, offering a pathway for tactile-responsive ferroelectric systems. However, mechanical polarization switching typically requires substantial static threshold forces to overcome the significant energy barrier, resulting in material fatigue and slow response that compromises reliability and hinders practical applications. In this work, we address these challenges by introducing an imprint field through asymmetric electrostatic boundary design with distinct work functions. This built-in electric field stabilizes the energy landscape, effectively lowering the polarization switching barrier. Subsequently, nonvolatile polarization switching with a low threshold force of 12 nN·nm−1 is achieved in CuInP2S6 without material damage. Surpassing the limitations of slow static force controls, our work marks the first experimental demonstration of fast mechanical control of polarization switching with 4 millisecond-long low force pulses. To further highlight the potential of this rapid, low-force mechanical control, we propose a van der Waals heterostructured mechanically gated transistor with asymmetric electrostatic boundary, which exhibits gate force pulses-controlled multi-level, nonvolatile conductance states. Our findings establish a paradigm for next-generation ferroelectric electronics that integrate responsiveness to mechanical stimuli.

Date: 2025
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/s41467-025-60602-x Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60602-x

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/s41467-025-60602-x

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().

 
Page updated 2025-06-21
Handle: RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-60602-x