Sacrifice-layer-free transfer of wafer-scale atomic-layer-deposited dielectrics and full-device stacks for two-dimensional electronics

Yuyu He, Zunxian Lv, Zhaochao Liu, Mingjian Yang, Wei Ai, Jiabiao Chen, Wanying Chen, Bing Wang, Xuewen Fu, Feng Luo and Jinxiong Wu ()
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Yuyu He: Nankai University
Zunxian Lv: Nankai University
Zhaochao Liu: Nankai University
Mingjian Yang: Nankai University
Wei Ai: Nankai University
Jiabiao Chen: Nankai University
Wanying Chen: Nankai University
Bing Wang: Nankai University
Xuewen Fu: Nankai University
Feng Luo: Nankai University
Jinxiong Wu: Nankai University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Transfer printing techniques have enabled the fabrication of devices on soft or delicate substrates that are incompatible with conventional manufacturing processes. However, the involved sacrifice-layer removal process typically causes damage to the quality of device interfaces. Here, we develop a sacrifice-layer-free transfer printing strategy by pre-depositing the device constituents onto commercially available mica substrates. The intrinsic weak interfacial interaction enables the transfer of various pre-deposited device constituents at the wafer scale, including well-known strongly adhesive dielectrics grown by atomic layer deposition (ALD). Moreover, entire top-gated device stacks can be simultaneously transferred onto few-layer MoS2 to form fully gated two-dimensional (2D) transistors, showing an atomically sharp interface, negligible gate hysteresis (~5 mV) and subthreshold swings near the thermionic limit. Importantly, the conformal growth of ALD dielectrics enables the one-step fabrication of complex top-gated Hall devices with a fully encapsulated structure, allowing multi-terminal gate-tunable transport measurements on fragile 2D materials, such as black phosphorus. Our work not only enriches the transfer printing methodologies for difficult-to-transfer materials, but also provides a method to investigate the properties of fragile 2D materials.

Date: 2025
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DOI: 10.1038/s41467-025-60864-5

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