1-nm-thick epitaxial AlN passivation for highly efficient flexible InGaN red micro-LEDs

Kiho Kong, Jun Hee Choi (), Joo Hun Han, Eunsung Lee, Jinjoo Park, Nakhyun Kim, Jaewoo Lee, Chanyoung Shin, Jung Hun Park, Dong-Chul Shin, Joosung Kim, Sunil Kim, Tae-Gon Kim, Seokho Yun and Miyoung Kim
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Kiho Kong: Samsung Advanced Institute of Technology
Jun Hee Choi: Samsung Advanced Institute of Technology
Joo Hun Han: Samsung Advanced Institute of Technology
Eunsung Lee: Samsung Advanced Institute of Technology
Jinjoo Park: Samsung Advanced Institute of Technology
Nakhyun Kim: Samsung Advanced Institute of Technology
Jaewoo Lee: Samsung Advanced Institute of Technology
Chanyoung Shin: Seoul National University
Jung Hun Park: Samsung Advanced Institute of Technology
Dong-Chul Shin: Samsung Advanced Institute of Technology
Joosung Kim: Samsung Advanced Institute of Technology
Sunil Kim: Samsung Advanced Institute of Technology
Tae-Gon Kim: Samsung Advanced Institute of Technology
Seokho Yun: Samsung Advanced Institute of Technology
Miyoung Kim: Seoul National University

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Highly efficient, ultrahigh-density inorganic micro-LED displays are gaining a strong position in the market for use in augmented reality glasses. When applied to electronic contact lenses with an eye-adaptive form factor, the micro-LED displays evolve into next generation augmented reality viewers. Here, we report 1-nm-thick epitaxial AlN passivation for 1.5-μm-diameter InGaN red micro-LEDs with high external quantum efficiency of 6.5% at the peak wavelength of 649 nm. The flexible form factor of the red micro-LEDs is achieved through the development of a near-complete device transfer. By overcoming the existing bottlenecks of red spectral efficiency and form factor of inorganic micro-LEDs, we believe this will pave the way for another revolution in the augmented reality and metaverse industries.

Date: 2025
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DOI: 10.1038/s41467-025-60886-z

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