All-optical reconfiguration of single silicon-vacancy centers in diamond for non-volatile memories
Yongzhou Xue (),
Xiaojuan Ni,
Michael Titze,
Shei Sia Su,
Bohan Wu,
Liang Zhang,
Chaohan Cui,
Saikat Guha,
Matt Eichenfield and
Linran Fan ()
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Yongzhou Xue: The University of Arizona, 1630 E. University Boulevard
Xiaojuan Ni: The University of Arizona, 1630 E. University Boulevard
Michael Titze: Sandia National Laboratories
Shei Sia Su: Sandia National Laboratories
Bohan Wu: The University of Arizona, 1630 E. University Boulevard
Liang Zhang: The University of Arizona, 1630 E. University Boulevard
Chaohan Cui: The University of Arizona, 1630 E. University Boulevard
Saikat Guha: The University of Arizona, 1630 E. University Boulevard
Matt Eichenfield: The University of Arizona, 1630 E. University Boulevard
Linran Fan: The University of Arizona, 1630 E. University Boulevard
Nature Communications, 2025, vol. 16, issue 1, 1-7
Abstract:
Abstract Strain engineering is vital for tuning the optical and spin properties of solid-state color centers, enhancing spin coherence and compensating emission wavelength shift. Here, we develop an all-optical approach to directly modify the local strain of color centers at the nanoscale by migrating the nearby defect. High-power pulsed optical irradiation triggers defect migration, which subsequently leads to the redistribution of the local crystal lattice of the host material. This redistribution alters the strain experienced by nearby color centers. Using silicon-vacancy centers in diamond, we validate this method and demonstrate a ground state splitting enhancement of up to 1.8 THz. Unlike conventional methods, our approach requires no external fields or nanostructure modifications, enabling non-volatile strain control and optical memory functionality across wide temperature ranges. Its local, permanent nature offers a scalable path for enhancing spin coherence in large-scale quantum systems and has potential applications in photonic machine learning.
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-61384-y
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DOI: 10.1038/s41467-025-61384-y
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