PZT optical memristors
Chenlei Li,
Hongyan Yu,
Tao Shu,
Yueyang Zhang,
Chengfeng Wen,
Hengzhen Cao,
Jin Xie,
Hanwen Li,
Zixu Xu,
Gong Zhang,
Zejie Yu,
Huan Li,
Liu Liu,
Yaocheng Shi,
Feng Qiu () and
Daoxin Dai ()
Additional contact information
Chenlei Li: Zijingang Campus
Hongyan Yu: Hangzhou
Tao Shu: Zijingang Campus
Yueyang Zhang: Zijingang Campus
Chengfeng Wen: Zijingang Campus
Hengzhen Cao: Zijingang Campus
Jin Xie: Zijingang Campus
Hanwen Li: Zijingang Campus
Zixu Xu: Zijingang Campus
Gong Zhang: Zijingang Campus
Zejie Yu: Zijingang Campus
Huan Li: Zijingang Campus
Liu Liu: Zijingang Campus
Yaocheng Shi: Zijingang Campus
Feng Qiu: Hangzhou
Daoxin Dai: Zijingang Campus
Nature Communications, 2025, vol. 16, issue 1, 1-13
Abstract:
Abstract Optical memristors represent a monumental leap in the fusion of photonics and electronics for neuromorphic computing and artificial intelligence. Here, we reveal the first lead zirconate titanate (PZT) optical memristor, working with a paradigm of functional duality: non-volatile setting and ultrafast volatile modulation via the Pockels effect. Fine-tuning and large modulation depth are achieved with an index change of 4.6 × 10−3 when setting above a threshold voltage Vth and the switching energy is 12.3 pJ only. The non-volatility is highly stable even with >100,000 cycles. Sub-nanosecond volatile modulation (48 Gbps, 432 fJ/bit) is realized with high efficiency (VπL ~ 0.5 V·cm) via the strong Pockels effect below Vth. Our wafer-scale manufacturing process shows great potential for mass production. The present PZT optical memristors bridge the gap between high-speed photonics and non-volatile memory, offering transformative potential for high-speed and energy-efficient optical interconnects, quantum computing, neural networks, in-memory computing, and brain-like architecture.
Date: 2025
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:16:y:2025:i:1:d:10.1038_s41467-025-61536-0
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DOI: 10.1038/s41467-025-61536-0
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