2D ferroelectric narrow-bandgap semiconductor Wurtzite’ type α-In2Se3 and its silicon-compatible growth

Yuxuan Jiang, Xingkun Ning, Renhui Liu, Kepeng Song, Sajjad Ali, Haoyue Deng, Yizhuo Li, Biaohong Huang, Jianhang Qiu, Xiaofei Zhu, Zhen Fan, Qiankun Li, Chengbing Qin, Fei Xue, Teng Yang (), Bing Li, Gang Liu, Weijin Hu (), Lain-Jong Li and Zhidong Zhang
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Yuxuan Jiang: Chinese Academy of Sciences
Xingkun Ning: Hebei University
Renhui Liu: Chinese Academy of Sciences
Kepeng Song: Shandong University
Sajjad Ali: Prince Sultan University
Haoyue Deng: South China Normal University
Yizhuo Li: Chinese Academy of Sciences
Biaohong Huang: Chinese Academy of Sciences
Jianhang Qiu: Chinese Academy of Sciences
Xiaofei Zhu: Chinese Academy of Sciences
Zhen Fan: South China Normal University
Qiankun Li: Soochow University
Chengbing Qin: Shanxi University
Fei Xue: Zhejiang University
Teng Yang: Chinese Academy of Sciences
Bing Li: Chinese Academy of Sciences
Gang Liu: Chinese Academy of Sciences
Weijin Hu: Chinese Academy of Sciences
Lain-Jong Li: National University of Singapore
Zhidong Zhang: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract 2D van der Waals ferroelectrics, particularly α-In2Se3, have emerged as an attractive building block for next-generation information storage technologies due to their moderate band gap and robust ferroelectricity stabilized by dipole locking. α-In2Se3 can adopt either the distorted zincblende or wurtzite structures; however, the wurtzite phase has yet to be experimentally validated, and its large-scale synthesis poses significant challenges. Here, we report an in-situ transport growth of centimeter-scale wurtzite type α-In2Se3 films directly on SiO2 substrates using a process combining pulsed laser deposition and chemical vapor deposition. We demonstrate that it is a narrow bandgap ferroelectric semiconductor, featuring a Curie temperature exceeding 620 K, a tunable bandgap (0.8–1.6 eV) modulated by charged domain walls, and a large optical absorption coefficient of 1.3 × 106/cm. Moreover, light absorption promotes the dynamic conductance range, linearity, and symmetry of the synapse devices, leading to a high recognition accuracy of 92.3% in a supervised pattern classification task for neuromorphic computing. Our findings demonstrate a ferroelectric polymorphism of In2Se3, highlighting its potential in ferroelectric synapses for neuromorphic computing.

Date: 2025
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DOI: 10.1038/s41467-025-62822-7

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