Evidence of air-induced surface transformation of atomic step-engineered sapphire in relation to epitaxial growth of 2D semiconductors

Wei Fu (), Jianwei Chai, Hiroyo Kawai, Thathsara Maddumapatabandi, Fabio Bussolotti, Ding Huang, Rainer Lee, Siew Lang Teo, Hui Ru Tan, Calvin Pei Yu Wong, Anqi Sng, Yunjie Chen, Chit Siong Lau, Mingsheng Zhang, Henry Medina, Ming Lin, Michel Bosman and Kuan Eng Johnson Goh ()
Additional contact information
Wei Fu: Agency for Science Technology and Research (A*STAR)
Jianwei Chai: Agency for Science Technology and Research (A*STAR)
Hiroyo Kawai: Agency for Science, Technology and Research
Thathsara Maddumapatabandi: Agency for Science Technology and Research (A*STAR)
Fabio Bussolotti: Agency for Science Technology and Research (A*STAR)
Ding Huang: Agency for Science Technology and Research (A*STAR)
Rainer Lee: Agency for Science Technology and Research (A*STAR)
Siew Lang Teo: Agency for Science Technology and Research (A*STAR)
Hui Ru Tan: Agency for Science Technology and Research (A*STAR)
Calvin Pei Yu Wong: Agency for Science Technology and Research (A*STAR)
Anqi Sng: Agency for Science Technology and Research (A*STAR)
Yunjie Chen: Agency for Science Technology and Research (A*STAR)
Chit Siong Lau: Agency for Science Technology and Research (A*STAR)
Mingsheng Zhang: Agency for Science Technology and Research (A*STAR)
Henry Medina: Agency for Science Technology and Research (A*STAR)
Ming Lin: Agency for Science Technology and Research (A*STAR)
Michel Bosman: Agency for Science Technology and Research (A*STAR)
Kuan Eng Johnson Goh: Agency for Science Technology and Research (A*STAR)

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract Engineering sapphire substrates with specific surface characteristics is crucial for the epitaxial growth of high-quality wafer-scale transition metal dichalcogenides, essential for integration with semiconductor industry processes. Here, we report that atomic-step-engineered sapphire surfaces undergo structural and chemical changes upon air exposure, which may be associated with surface hydrolysis and the formation of aluminum (oxy)hydroxides as revealed by a self-developed charge-contrast enhanced X-ray photoelectron spectroscopy technique. We suggest these species transform into oxygen-deficient Al2O3-x under typical growth conditions, associated with disrupted domain alignment. We further demonstrate that ultraviolet light irradiation in air appears to mitigate this degradation, restoring surface stoichiometry and promoting epitaxial alignment. The grown monolayer WS₂ films exhibit high crystalline quality, good uniformity, and low defect density. Statistical analysis of 100 field-effect transistors shows a device yield >95% and a mobility variation

Date: 2025
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DOI: 10.1038/s41467-025-63452-9

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