Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates

Jing Ning (), Zhichun Yang, Haidi Wu, Xinmeng Dong, Yaning Zhang, Yufei Chen, Xinbo Zhang, Dong Wang, Yue Hao and Jincheng Zhang ()
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Jing Ning: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Zhichun Yang: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Haidi Wu: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Xinmeng Dong: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Yaning Zhang: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Yufei Chen: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Xinbo Zhang: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Dong Wang: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Yue Hao: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology
Jincheng Zhang: The State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract The self-heating effect in wide bandgap semiconductor devices makes epitaxial Ga2O3 on diamond substrates crucial for thermal management. However, the lack of wafer-scale single-crystal diamond and severe lattice mismatch limit its industrial application. This study presents van der Waals β-Ga2O3 (VdW-β-Ga2O3) grown on high-thermal-conductivity polycrystalline diamond. VdW forces modify the coupling state between the single-crystal thin film and polycrystalline substrate. Tunable growth of ( $$\bar{2}01$$ 2 ¯ 01 ) VdW-β-Ga2O3 is achieved by leveraging the mismatch between graphene and the oxygen surface densities of varying crystal orientations and their oxygen-partial-pressure dependence. The 350 nm thick, high-crystallinity films exhibit a smallest rocking curve FWHM value of 0.18° and a root mean square roughness of 6.71 nm. Graphene alleviated interfacial thermal expansion stress; β-Ga2O3/diamond interface exhibits an ultralow thermal boundary resistance of 2.82 m2·K/GW. Photodetectors exhibit a photo-to-dark current ratio of 106 and a responsivity of 210 A/W, confirming the strategy’s practicality and technological significance.

Date: 2025
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DOI: 10.1038/s41467-025-63666-x

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