High-sensitivity and fast-response solar-blind photodetectors via band offset engineering for motion tracking

Hongbin Wang, Cheng Zhou, Peng Li (), Lin Yang, Jiangang Ma (), Ryota Akaike, Hideto Miyake, Haiyang Xu () and Yichun Liu
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Hongbin Wang: Northeast Normal University
Cheng Zhou: Northeast Normal University
Peng Li: Northeast Normal University
Lin Yang: Northeast Normal University
Jiangang Ma: Northeast Normal University
Ryota Akaike: Mie University
Hideto Miyake: Mie University
Haiyang Xu: Northeast Normal University
Yichun Liu: Northeast Normal University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Single-pixel imaging is emerging as a promising alternative to traditional focal plane array technologies, offering advantages in compactness and cost-effectiveness. However, the lack of solar-blind photodetectors combining fast-response and high-sensitivity has constrained their application in the deep ultraviolet spectrum. This work introduces a self-powered solar-blind photodetector based on a heterostructure comprising a Ga2O3 photosensitive layer, an AlN barrier layer, and an N-polar AlGaN:Si contact layer. The polarization field within the AlN layer induces band bending, creating potential wells that confine photogenerated holes and thereby generate photocurrent gain. Consequently, the Ga2O3/AlN/AlGaN:Si solar-blind photodetector achieves a high responsivity of 0.73 A W‒1 and a rapid decay time of 56 µs. This performance enables 256 × 256 resolution solar-blind single-pixel imaging of both static fingerprints and moving objects. The proposed band offset engineering strategy opens a pathway for developing solar-blind photodetectors and solar-blind imaging technologies.

Date: 2025
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DOI: 10.1038/s41467-025-63683-w

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