Ferroelectric-based Pockels photonic memory

Zefeng Xu, Chun-Kuei Chen, Hong-Lin Lin, Maheswari Sivan, Evgeny Zamburg, James Yong-Meng Lee, Suresh Venkatesan, Aaron Danner and Aaron Voon-Yew Thean ()
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Zefeng Xu: National University of Singapore (NUS)
Chun-Kuei Chen: National University of Singapore (NUS)
Hong-Lin Lin: National University of Singapore (NUS)
Maheswari Sivan: National University of Singapore (NUS)
Evgeny Zamburg: National University of Singapore (NUS)
James Yong-Meng Lee: POET Technologies
Suresh Venkatesan: POET Technologies
Aaron Danner: National University of Singapore (NUS)
Aaron Voon-Yew Thean: National University of Singapore (NUS)

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Efficient data transfer between memory and photonic components is crucial for a wide range of applications. However, this necessity brings forth energy-efficient data movement challenges associated with the memory wall, underscoring the demand for a fast and low-energy electro-optic photonic memory solution. Here, we demonstrate a class of energy-efficient electro-optic devices, namely Pockels photonic memory, that combines low-field switchable ferroelectrics with lithium niobate’s Pockel’s effect. Among such devices, this article will describe in detail the integrated embodiment of a ferroelectric field-effect transistor with lithium niobate on insulator micro ring resonator. We achieve switchable and non-volatile multiple optical memory states (6 states per transistor) with ultra-low energy cost (femto Joule/state), while achieving robust 10 year data retention and read-write endurance exceeding 107 cycles. Furthermore, we demonstrate the possibility of linear memory state stacking. The Pockels photonic memory enables the scaling of reconfigurable photonic systems into the femto Joule/state energy efficiencies.

Date: 2025
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DOI: 10.1038/s41467-025-63850-z

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