Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain

Alessandro Buzzi (), Camille Papon (), Matteo Pirro, Odiel Hooybergs, Hamza Raniwala, Valeria Saggio, Carlos Errando-Herranz () and Dirk Englund ()
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Alessandro Buzzi: Massachusetts Institute of Technology
Camille Papon: Massachusetts Institute of Technology
Matteo Pirro: Delft University of Technology
Odiel Hooybergs: Massachusetts Institute of Technology
Hamza Raniwala: Massachusetts Institute of Technology
Valeria Saggio: Massachusetts Institute of Technology
Carlos Errando-Herranz: Delft University of Technology
Dirk Englund: Massachusetts Institute of Technology

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract The development of color centers in silicon enables scalable quantum technologies by combining telecom-wavelength emission and compatibility with mature silicon fabrication. However, large-scale integration requires precise control of each emitter’s optical transition to generate indistinguishable photons for quantum networking. Here, we demonstrate a foundry-fabricated photonic integrated circuit (PIC) combining suspended silicon waveguides with a microelectromechanical (MEMS) cantilever to apply local strain and spectrally tune individual G-centers. Applying up to 35 V between the cantilever and the substrate induces a reversible wavelength shift of the zero-phonon line exceeding 100 pm, with no loss in brightness. Moreover, by modeling the strain-induced shifts with a digital twin physical model, we achieve vertical localization of color centers with sub-3 nm vertical resolution, directly correlating their spatial position, dipole orientation, and spectral behavior. This method enables on-demand, low-power control of emission spectrum and nanoscale localization of color centers, advancing quantum networks on a foundry-compatible platform.

Date: 2025
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DOI: 10.1038/s41467-025-63871-8

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