Electrically tunable quantum interference of atomic spins on surfaces

Hao Wang, Jing Chen, Peng Fan, Yelko Castillo, Alejandro Ferrón, Lili Jiang, Zilong Wu, Shijie Li, Hong-Jun Gao, Heng Fan, Joaquín Fernández-Rossier () and Kai Yang ()
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Hao Wang: Chinese Academy of Sciences
Jing Chen: Chinese Academy of Sciences
Peng Fan: Chinese Academy of Sciences
Yelko Castillo: Avenida Mestre José Veiga
Alejandro Ferrón: Universidad Nacional del Nordeste
Lili Jiang: University of Chinese Academy of Sciences
Zilong Wu: Chinese Academy of Sciences
Shijie Li: Chinese Academy of Sciences
Hong-Jun Gao: Chinese Academy of Sciences
Heng Fan: Chinese Academy of Sciences
Joaquín Fernández-Rossier: Avenida Mestre José Veiga
Kai Yang: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Controlling quantum interference near avoided energy-level crossings is crucial for fast and reliable coherent manipulation in quantum information processing. However, achieving tunable quantum interference in atomically-precise engineered structures remains challenging. Here, we demonstrate electrical control of quantum interference using atomic spins on an insulating film in a scanning tunneling microscope. Using bias voltages applied across the tunnel junction, we modulate the atomically-confined magnetic interaction between the probe tip and surface atoms with a strong electric field, and drive the spin state rapidly through the energy-level anticrossing. This all-electrical manipulation allows us to achieve Landau-Zener-Stückelberg-Majorana (LZSM) interferometry on both single spins and pairs of interacting spins. The LZSM pattern exhibits multiphoton resonances, and its asymmetry suggests that the spin dynamics is influenced by spin-transfer torque of tunneling electrons. Multi-level LZSM spectra measured on coupled spins with tunable interactions show distinct interference patterns depending on their many-body energy landscapes. These results open new avenues for all-electrical quantum manipulation in spin-based quantum processors in the strongly driven regime.

Date: 2025
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DOI: 10.1038/s41467-025-64022-9

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