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Local microwave sensing of excitons and their electrical environment

Zhurun Ji (), Mark E. Barber, Ziyan Zhu, Carlos R. Kometter, Jiachen Yu, Kenji Watanabe, Takashi Taniguchi, Mengkun Liu, Thomas P. Devereaux, Benjamin E. Feldman and Zhixun Shen ()
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Zhurun Ji: Stanford University
Mark E. Barber: Stanford University
Ziyan Zhu: SLAC National Accelerator Laboratory
Carlos R. Kometter: Stanford University
Jiachen Yu: Stanford University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Mengkun Liu: Stony Brook University
Thomas P. Devereaux: Stanford University
Benjamin E. Feldman: Stanford University
Zhixun Shen: Stanford University

Nature Communications, 2025, vol. 16, issue 1, 1-9

Abstract: Abstract Excitons in atomically thin transition metal dichalcogenides (TMDs) possess intriguing optical properties, drawing interest for both technology and fundamental research. However, as the demands for nanodevice applications and the exploration of fundamental physics push toward smaller, subwavelength scales, studying them locally is challenging. In this work, we introduce a cryogenic scanning probe photoelectrical sensing technique, termed exciton-resonant microwave impedance microscopy (ER-MIM), to measure the excitonic responses in a monolayer MoSe2 device at 1.5K. From the microwave signal changes, we identify exciton polarons and their Rydberg states. Building on these observations, we systemically reveal the local and nonlocal effects of carrier density, inhomogeneous electric fields, as well as dielectric screening on excitons, beyond the reach of conventional probes. By further integrating deep learning techniques, we precisely extracted the electrical parameters surrounding excitons, demonstrating a quantified, exciton-assisted nanoscale electrometry. Our results provide new insight into exciton-environment interactions, establish ER-MIM as a powerful optoelectronic sensing platform, and open avenues for exciton-based quantum control and device technologies.

Date: 2025
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DOI: 10.1038/s41467-025-64280-7

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