Unconventional bias-dependent tunneling magnetoresistance in van der Waals ferromagnetic/semiconductor heterojunctions

Wenkai Zhu, Hui Wen, Shouguo Zhu, Qirui Cui, Shihong Xie, Meng Ye, Gaojie Zhang, Hao Wu, Xiaomin Zhang, Weihao Li, Yuqing Huang, Jing Zhang, Lixia Zhao, Amalia Patanè, Haixin Chang (), Lin-Wang Wang and Kaiyou Wang ()
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Wenkai Zhu: Chinese Academy of Sciences
Hui Wen: Chinese Academy of Sciences
Shouguo Zhu: Chinese Academy of Sciences
Qirui Cui: AlbaNova University Center
Shihong Xie: Chinese Academy of Sciences
Meng Ye: Chinese Academy of Sciences
Gaojie Zhang: Huazhong University of Science and Technology
Hao Wu: Huazhong University of Science and Technology
Xiaomin Zhang: Chinese Academy of Sciences
Weihao Li: Chinese Academy of Sciences
Yuqing Huang: Chinese Academy of Sciences
Jing Zhang: Chinese Academy of Sciences
Lixia Zhao: Tiangong University
Amalia Patanè: University of Nottingham
Haixin Chang: Huazhong University of Science and Technology
Lin-Wang Wang: Chinese Academy of Sciences
Kaiyou Wang: Chinese Academy of Sciences

Nature Communications, 2025, vol. 16, issue 1, 1-7

Abstract: Abstract Two-dimensional van der Waals (vdW) ferromagnetic/semiconductor heterojunctions provide an ideal platform for studying and exploiting tunneling magnetoresistance (TMR) effects, due to the versatile band structure of semiconductors and high quality of their interfaces. In all-vdW magnetic tunnel junction (MTJ) devices, both the magnitude and sign of TMR can be tuned by an applied voltage. Typically, as the bias voltage increases, the amplitude of TMR initially decreases, followed by a reversal and/or oscillation in its sign. Herein, we report on an unconventional bias-dependent TMR observed in all-vdW Fe3GaTe2/GaSe/Fe3GaTe2 MTJs, where TMR first increases, then decreases, and ultimately undergoes a sign reversal as the bias voltage increases. By considering the coherent degree of in-plane electron momentum $${{{{\bf{k}}}}}_{{{\parallel }}}$$ k ∥ and the decay of the electron wave function through the semiconductor spacer layer, our theoretical prediction successfully explains this unconventional bias-dependent TMR. Consequently, our results offer a deeper understanding of bias-dependent spin-transport in semiconductor-based MTJs and provide new insights into semiconductor spintronics.

Date: 2025
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DOI: 10.1038/s41467-025-64551-3

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