Low-dimensional templates and delayed crystallization for high-quality tin-based perovskite films and high-performance transistors

Yanqiu Wu, Shuzhang Yang, Enlong Li, Yu Liu, Feng Yuan, Jincheng Wen, Lina Hua, Wunan Wang, Yingguo Yang, Yusheng Lei, Junhao Chu and Wenwu Li ()
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Yanqiu Wu: Fudan University
Shuzhang Yang: Fudan University
Enlong Li: Fudan University
Yu Liu: Fudan University
Feng Yuan: Fudan University
Jincheng Wen: Fudan University
Lina Hua: Fudan University
Wunan Wang: Fudan University
Yingguo Yang: Fudan University
Yusheng Lei: Fudan University
Junhao Chu: Fudan University
Wenwu Li: Fudan University

Nature Communications, 2025, vol. 16, issue 1, 1-10

Abstract: Abstract Quasi-2D tin-based perovskites are promising p-type semiconductors due to their thermodynamic stability and suppressed ion migration tendencies. However, the competitive growth of low- and high-dimensional phases leads to pronounced structural disorder, increased defect density, and poor crystallographic orientation, thereby restricting charge transport. Here, phenethylammonium thiocyanate (PEASCN) is incorporated into the precursor to promote the preferential formation of PEA2FAn-1SnnI3n-1SCN2 (n = 2) templates. Substituting formamidinium iodide (FAI) with formamidinium formate (FAHCOO) and ammonium iodide (NH4I) suppresses the uncontrollable growth of 3D FASnI3 at room temperature, enabling precise crystallization control. These low-dimensional templates guide the growth of high-dimensional phases upon annealing, yielding vertically oriented films with reduced defects. The fabricated field-effect transistors exhibit mobility up to 43 cm2 V−1 s−1 and an on/off ratio exceeding 108, alongside nearly negligible hysteresis and enhanced stability. These results demonstrate a viable approach for regulating crystallization kinetics and realizing high-performance, stable tin-based perovskite devices.

Date: 2025
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DOI: 10.1038/s41467-025-64560-2

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