High inductance density in CMOS-compatible magnetically integrated 3D microinductors for radio-frequency applications

Li Chen, Zhiyuan Qiao, Shengbao Liu, Jinbo Yang, Yue Wu, Pengchuan Liu, Zhi Zheng, Luozhao Zhang, Yuhang Hu, Tingqi Wu, Wen Huang, Yongfeng Mei (), Gaoshan Huang () and Jizhai Cui ()
Additional contact information
Li Chen: Fudan University
Zhiyuan Qiao: Fudan University
Shengbao Liu: Fudan University
Jinbo Yang: Fudan University
Yue Wu: Fudan University
Pengchuan Liu: Fudan University
Zhi Zheng: Fudan University
Luozhao Zhang: Fudan University
Yuhang Hu: Fudan University
Tingqi Wu: ShanghaiTech University
Wen Huang: Fudan University
Yongfeng Mei: Fudan University
Gaoshan Huang: Fudan University
Jizhai Cui: Fudan University

Nature Communications, 2025, vol. 16, issue 1, 1-12

Abstract: Abstract On-chip inductors enable high integration in radio-frequency electronics, critical for compact, power-efficient systems. However, they often occupy a large chip area due to low inductance density (D, defined as the total inductance per unit area) that scales sublinearly with conductor length (l) in planar architectures. Here, we present a three-dimensional rolled-up, magnetically integrated microinductor technology with record-high inductance density. By exploiting a superlinear scaling law (D ∝ l2.4) via 3D winding with magnetic thin films, our devices achieve 8333 nH/mm² at 0.55 GHz—over two orders of magnitude higher than conventional planar inductors. This breakthrough stems from a 3D geometry in which strained layers confine multiple turns in a compact tubular volume, intensifying local fields and flux linkage while reducing leakage. A wafer-scale, CMOS-compatible process yields self-assembled coils that roll 10 mm of planar conductors into ~240 μm-diameter microcoils. The high inductance density, low substrate losses, and GHz operation make magnetically integrated inductors suited for more compact radio-frequency systems-on-chip and high-frequency power modules and next-generation Internet of Things/5G/6G applications.

Date: 2025
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DOI: 10.1038/s41467-025-65032-3

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