Measuring Hall voltage and Hall resistance in an atom-based quantum simulator

T.-W. Zhou, T. Beller, G. Masini, J. Parravicini, G. Cappellini, C. Repellin, T. Giamarchi, J. Catani, M. Filippone and L. Fallani ()
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T.-W. Zhou: University of Florence, Department of Physics and Astronomy
T. Beller: University of Florence, Department of Physics and Astronomy
G. Masini: European Laboratory for Non-Linear Spectroscopy (LENS)
J. Parravicini: University of Florence, Department of Physics and Astronomy
G. Cappellini: European Laboratory for Non-Linear Spectroscopy (LENS)
C. Repellin: Université Grenoble Alpes, CNRS, LPMMC
T. Giamarchi: University of Geneva, Department of Quantum Matter Physics
J. Catani: European Laboratory for Non-Linear Spectroscopy (LENS)
M. Filippone: Université Grenoble Alpes, CEA, IRIG-MEM-L_SIM
L. Fallani: University of Florence, Department of Physics and Astronomy

Nature Communications, 2025, vol. 16, issue 1, 1-7

Abstract: Abstract In the Hall effect, a voltage drop develops perpendicularly to the current flow in the presence of a magnetic field, leading to a transverse Hall resistance. Recent developments with quantum simulators have unveiled strongly correlated and universal manifestations of the Hall effect. However, a direct measurement of the Hall voltage and of the Hall resistance in a non-electronic system of strongly interacting fermions was not achieved to date. Here, we demonstrate a technique for measuring the Hall voltage in a neutral-atom-based quantum simulator. From that we provide the first direct measurement of the Hall resistance in a cold-atom analogue of a solid-state Hall bar and study its dependence on the carrier density, along with theoretical analyses. Our work closes a major gap between analogue quantum simulations and measurements performed in solid-state systems, providing a key tool for the exploration of the Hall effect in highly tunable and strongly correlated systems.

Date: 2025
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DOI: 10.1038/s41467-025-65083-6

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