Topologically enhanced giant broadband second-harmonic generation in Weyl semiconductor tellurium

Delang Liang, Mingyang Qin, Yong Liu, Weiming Wang, Bin Cheng, Xiao Zhuo, Shiyu Wang, Zipu Fan, Huawei Liu, Guisen Chen, Qinsheng Wang, Changgan Zeng, Anlian Pan (), Jinluo Cheng () and Dong Sun ()
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Delang Liang: Hunan University, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering
Mingyang Qin: Peking University, International Center for Quantum Materials, School of Physics
Yong Liu: Hunan University, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering
Weiming Wang: Chinese Academy of Sciences, Key Laboratory of Luminescence Science and Technology
Bin Cheng: University of Science and Technology of China, CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics
Xiao Zhuo: Peking University, International Center for Quantum Materials, School of Physics
Shiyu Wang: Peking University, International Center for Quantum Materials, School of Physics
Zipu Fan: Peking University, International Center for Quantum Materials, School of Physics
Huawei Liu: Hunan University, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering
Guisen Chen: Hunan University, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering
Qinsheng Wang: Beijing Institute of Technology, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics
Changgan Zeng: University of Science and Technology of China, CAS Key Laboratory of Strongly Coupled Quantum Matter Physics, and Department of Physics
Anlian Pan: Hunan University, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering
Jinluo Cheng: Chinese Academy of Sciences, Key Laboratory of Luminescence Science and Technology
Dong Sun: Peking University, International Center for Quantum Materials, School of Physics

Nature Communications, 2025, vol. 16, issue 1, 1-8

Abstract: Abstract Achieving strong nonlinear optical (NLO) responses in atomically thin layered materials is essential for advanced nanoscale photonic and on-chip integrated optoelectronic technologies. However, most materials with large second-order susceptibility ( $${\chi }^{(2)}$$ χ ( 2 ) ) operate only over narrow wavelength ranges, with rare reports in the mid-infrared (MIR) region. Topological engineering provides a promising strategy to enhance NLO responses. Here, we demonstrate that Weyl semiconductor tellurium (Te) nanoflakes exhibit giant second harmonic generation (SHG) across an ultrabroadband infrared range (1.2-5.0 μm), including the challenging MIR region, achieving conversion efficiency two orders of magnitude greater than GaSe. The extracted $${\chi }^{(2)}$$ χ ( 2 ) spectrum reveals a prominent peak of 5.0 ± 0.4 nm V-1 at 2.2-μm excitation and two shoulders, attributable to three two-photon resonances with interband transitions near three different Weyl cones, indicating topological enhancement of SHG. The giant, anisotropic, ultrabroadband SHG in Te nanoflakes promises unprecedented versatility for MIR frequency conversion and advanced MIR nonlinear optical devices.

Date: 2025
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DOI: 10.1038/s41467-025-65353-3

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