Wafer-scale uniform epitaxy of transferable 2D single crystals for gate-all-around nanosheet field effect transistors

Chengyuan Xue, Congwei Tan, Xin Gao, Junchuan Tang, Weiyu Sun, Yuling Yin, Mengdi Wang, Xiaoyin Gao, Hao An, Boyang Fu, Wanqing Liu, Yuteng Wang, Ye Li, Feng Ding and Hailin Peng ()
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Chengyuan Xue: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Congwei Tan: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Xin Gao: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Junchuan Tang: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Weiyu Sun: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Yuling Yin: Suzhou Laboratory
Mengdi Wang: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Xiaoyin Gao: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Hao An: Ulsan National Institute of Science and Technology, School of Materials Science and Engineering
Boyang Fu: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Wanqing Liu: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Yuteng Wang: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Ye Li: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering
Feng Ding: Suzhou Laboratory
Hailin Peng: Peking University, Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering

Nature Communications, 2025, vol. 16, issue 1, 1-11

Abstract: Abstract Gate-all-around (GAA) nanosheet field-effect transistors (FETs) with two-dimensional (2D) semiconductor channels surrounded by high-κ dielectrics show outstanding performance and hold promise for ultimate miniaturization in the post-Moore era. However, the synthesis of uniform wafer-scale 2D GAA nanosheet single crystals on industry-compatible substrates presents a considerable challenge. Herein, we report wafer-scale uniform growth of 2D high-κ oxide/semiconductor/high-κ oxide GAA single crystals on r-plane sapphire via buffered van der Waals (vdW) epitaxy. The 2D GAA heterostructures possess atomically flat interfaces, exhibiting superb uniformity and crystallinity across the wafer. Furthermore, the 2D GAA heterostructures can be transferred to diverse substrates owing to the vdW gap within the buffer oxide, leaving a reusable wafer. FETs based on 2D GAA heterostructures demonstrate exceptional performance with on/off ratio and optimal carrier mobility of > 10⁶ and 227 cm² V⁻¹ s⁻¹, respectively. The transferable wafer-scale 2D GAA heterostructures provide promising avenues for the fabrication of monolithic three-dimensional integrated circuits and extending Moore’s law beyond the limitations of silicon.

Date: 2025
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DOI: 10.1038/s41467-025-65641-y

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