Ferroelectricity-driven strain-mediated magnetoelectric coupling in two-dimensional multiferroic heterostructure

Chuanyang Cai, Yao Wen (), Shiheng Liang, Lei Yin, Ruiqing Cheng, Hao Wang, Xiaoqiang Feng, Liang Liu and Jun He ()
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Chuanyang Cai: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Yao Wen: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Shiheng Liang: Hubei University, College of Physics
Lei Yin: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Ruiqing Cheng: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Hao Wang: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Xiaoqiang Feng: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology
Liang Liu: Shandong University, School of Physics, State Key Laboratory for Crystal Materials
Jun He: Wuhan University, Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physical and Technology

Nature Communications, 2025, vol. 16, issue 1, 1-14

Abstract: Abstract In the post-Moore era, CMOS technology faces challenges in storage and power consumption. Two-dimensional van der Waals ferromagnets, with their atomically sharp interfaces, enable heterostructure with ferroelectric materials. Through strong magnetoelectric coupling effects, they provide an ideal platform for developing highly efficient magnetoelectric interfaces. Leveraging this ideal platform, this study proposes a strain-modulation strategy based on vertically integrated two-dimensional van der Waals multiferroic heterojunctions Fe3GaTe2/P(VDF-TrFE) to address these challenges. This structure utilizes the inverse piezoelectric effect of ferroelectric polymers to induce strain. Through magnetoelectric coupling, the heterojunction achieves non-volatile reconfiguration of the magnetic anisotropy constant of Fe3GaTe2 at room temperature. This enables fully reversible electrical control of the anomalous Hall resistance and inverter functionality. Device integration validated reconfigurable logic gates and half-adder circuits, demonstrating ultra-low energy consumption (0.5 aJ), nanosecond-scale write speeds (5 ns), and high operational stability.

Date: 2025
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DOI: 10.1038/s41467-025-65688-x

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