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Large Rashba spin splitting of a metallic surface-state band on a semiconductor surface

Koichiro Yaji, Yoshiyuki Ohtsubo, Shinichiro Hatta, Hiroshi Okuyama, Koji Miyamoto, Taichi Okuda, Akio Kimura, Hirofumi Namatame, Masaki Taniguchi and Tetsuya Aruga ()
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Koichiro Yaji: Graduate School of Science, Kyoto University
Yoshiyuki Ohtsubo: Graduate School of Science, Kyoto University
Shinichiro Hatta: Graduate School of Science, Kyoto University
Hiroshi Okuyama: Graduate School of Science, Kyoto University
Koji Miyamoto: Hiroshima Synchrotron Radiation Center, Hiroshima University
Taichi Okuda: Hiroshima Synchrotron Radiation Center, Hiroshima University
Akio Kimura: Graduate School of Science, Hiroshima University
Hirofumi Namatame: Hiroshima Synchrotron Radiation Center, Hiroshima University
Masaki Taniguchi: Hiroshima Synchrotron Radiation Center, Hiroshima University
Tetsuya Aruga: Graduate School of Science, Kyoto University

Nature Communications, 2010, vol. 1, issue 1, 1-5

Abstract: Abstract The generation of spin-polarized electrons at room temperature is an essential step in developing semiconductor spintronic applications. To this end, we studied the electronic states of a Ge(111) surface, covered with a lead monolayer at a fractional coverage of 4/3, by angle-resolved photoelectron spectroscopy (ARPES), spin-resolved ARPES and first-principles electronic structure calculation. We demonstrate that a metallic surface-state band with a dominant Pb 6p character exhibits a large Rashba spin splitting of 200 meV and an effective mass of 0.028 me at the Fermi level. This finding provides a material basis for the novel field of spin transport/accumulation on semiconductor surfaces. Charge density analysis of the surface state indicated that large spin splitting was induced by asymmetric charge distribution in close proximity to the nuclei of Pb atoms.

Date: 2010
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DOI: 10.1038/ncomms1016

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