Creation of a two-dimensional electron gas at an oxide interface on silicon

J.W. Park, D.F. Bogorin, C. Cen, D.A. Felker, Y. Zhang, C.T. Nelson, C.W. Bark, C.M. Folkman, X.Q. Pan, M.S. Rzchowski, J. Levy and C.B. Eom ()
Additional contact information
J.W. Park: University of Wisconsin-Madison
D.F. Bogorin: University of Pittsburgh
C. Cen: University of Pittsburgh
D.A. Felker: University of Wisconsin-Madison
Y. Zhang: University of Michigan
C.T. Nelson: University of Michigan
C.W. Bark: University of Wisconsin-Madison
C.M. Folkman: University of Wisconsin-Madison
X.Q. Pan: University of Michigan
M.S. Rzchowski: University of Wisconsin-Madison
J. Levy: University of Pittsburgh
C.B. Eom: University of Wisconsin-Madison

Nature Communications, 2010, vol. 1, issue 1, 1-7

Abstract: Abstract In recent years, reversible control over metal-insulator transition has been shown, at the nanoscale, in a two-dimensional electron gas (2DEG) formed at the interface between two complex oxides. These materials have thus been suggested as possible platforms for developing ultrahigh-density oxide nanoelectronics. A prerequisite for the development of these new technologies is the integration with existing semiconductor electronics platforms. Here, we demonstrate room-temperature conductivity switching of 2DEG nanowires formed at atomically sharp LaAlO3/SrTiO3 (LAO/STO) heterointerfaces grown directly on (001) Silicon (Si) substrates. The room-temperature electrical transport properties of LAO/STO heterointerfaces on Si are comparable with those formed from a SrTiO3 bulk single crystal. The ability to form reversible conducting nanostructures directly on Si wafers opens new opportunities to incorporate ultrahigh-density oxide nanoelectronic memory and logic elements into well-established Si-based platforms.

Date: 2010
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DOI: 10.1038/ncomms1096

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