Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

Boya Dai, Lei Fu, Zhiyu Zou, Min Wang, Haitao Xu, Sheng Wang and Zhongfan Liu ()
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Boya Dai: Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University
Lei Fu: Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University
Zhiyu Zou: Academy for Advanced Interdisciplinary Studies, Peking University
Min Wang: Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University
Haitao Xu: Peking University
Sheng Wang: Peking University
Zhongfan Liu: Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University

Nature Communications, 2011, vol. 2, issue 1, 1-6

Abstract: Abstract Controlled growth of high-quality graphene is still the bottleneck of practical applications. The widely used chemical vapour deposition process generally suffers from an uncontrollable carbon precipitation effect that leads to inhomogeneous growth and strong correlation to the growth conditions. Here we report the rational design of a binary metal alloy that effectively suppresses the carbon precipitation process and activates a self-limited growth mechanism for homogeneous monolayer graphene. As demonstrated by an Ni–Mo alloy, the designed binary alloy contains an active catalyst component for carbon source decomposition and graphene growth and a black hole counterpart for trapping the dissolved carbons and forming stable metal carbides. This type of process engineering has been used to grow strictly single-layer graphene with 100% surface coverage and excellent tolerance to variations in growth conditions. With simplicity, scalability and a very large growth window, the presented approach may facilitate graphene research and industrial applications.

Date: 2011
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DOI: 10.1038/ncomms1539

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