Selective dispersion of high purity semiconducting single-walled carbon nanotubes with regioregular poly(3-alkylthiophene)s

Hang Woo Lee, Yeohoon Yoon, Steve Park, Joon Hak Oh, Sanghyun Hong, Luckshitha S. Liyanage, Huiliang Wang, Satoshi Morishita, Nishant Patil, Young Jun Park, Jong Jin Park, Andrew Spakowitz, Giulia Galli, Francois Gygi, Philip H.-S. Wong, Jeffrey B.-H. Tok, Jong Min Kim () and Zhenan Bao ()
Additional contact information
Hang Woo Lee: Department of Chemical Engineering
Yeohoon Yoon: University of California
Steve Park: Stanford University
Joon Hak Oh: Department of Chemical Engineering
Sanghyun Hong: Department of Chemical Engineering
Luckshitha S. Liyanage: Stanford University
Huiliang Wang: Stanford University
Satoshi Morishita: Department of Chemical Engineering
Nishant Patil: Stanford University
Young Jun Park: Frontier Research Lab, Samsung Advanced Institute of Technology
Jong Jin Park: Frontier Research Lab, Samsung Advanced Institute of Technology
Andrew Spakowitz: Department of Chemical Engineering
Giulia Galli: University of California
Francois Gygi: University of California
Philip H.-S. Wong: Stanford University
Jeffrey B.-H. Tok: Department of Chemical Engineering
Jong Min Kim: Frontier Research Lab, Samsung Advanced Institute of Technology
Zhenan Bao: Department of Chemical Engineering

Nature Communications, 2011, vol. 2, issue 1, 1-8

Abstract: Abstract Conjugated polymers, such as polyfluorene and poly(phenylene vinylene), have been used to selectively disperse semiconducting single-walled carbon nanotubes (sc-SWNTs), but these polymers have limited applications in transistors and solar cells. Regioregular poly(3-alkylthiophene)s (rr-P3ATs) are the most widely used materials for organic electronics and have been observed to wrap around SWNTs. However, no sorting of sc-SWNTs has been achieved before. Here we report the application of rr-P3ATs to sort sc-SWNTs. Through rational selection of polymers, solvent and temperature, we achieved highly selective dispersion of sc-SWNTs. Our approach enables direct film preparation after a simple centrifugation step. Using the sorted sc-SWNTs, we fabricate high-performance SWNT network transistors with observed charge-carrier mobility as high as 12 cm2 V−1 s−1 and on/off ratio of >106. Our method offers a facile and a scalable route for separating sc-SWNTs and fabrication of electronic devices.

Date: 2011
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DOI: 10.1038/ncomms1545

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