High-density magnetoresistive random access memory operating at ultralow voltage at room temperature
Jia-Mian Hu,
Zheng Li,
Long-Qing Chen () and
Ce-Wen Nan ()
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Jia-Mian Hu: and State Key Lab of New Ceramics and Fine Processing, Tsinghua University
Zheng Li: and State Key Lab of New Ceramics and Fine Processing, Tsinghua University
Long-Qing Chen: The Pennsylvania State University
Ce-Wen Nan: and State Key Lab of New Ceramics and Fine Processing, Tsinghua University
Nature Communications, 2011, vol. 2, issue 1, 1-8
Abstract:
Abstract The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch−2, ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.
Date: 2011
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:2:y:2011:i:1:d:10.1038_ncomms1564
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DOI: 10.1038/ncomms1564
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