Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators

Jinsong Zhang, Cui-Zu Chang, Zuocheng Zhang, Jing Wen, Xiao Feng, Kang Li, Minhao Liu, Ke He (), Lili Wang, Xi Chen, Qi-Kun Xue, Xucun Ma and Yayu Wang ()
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Jinsong Zhang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Cui-Zu Chang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Zuocheng Zhang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Jing Wen: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xiao Feng: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Kang Li: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Minhao Liu: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Ke He: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Lili Wang: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Xi Chen: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Qi-Kun Xue: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University
Xucun Ma: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences
Yayu Wang: State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University

Nature Communications, 2011, vol. 2, issue 1, 1-6

Abstract: Abstract Topological insulators (TIs) are quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The most challenging problem faced by current investigations of these materials is to establish the existence of significant bulk conduction. Here we show how the band structure of topological insulators can be engineered by molecular beam epitaxy growth of (Bi1−xSbx)2Te3 ternary compounds. The topological surface states are shown to exist over the entire composition range of (Bi1−xSbx)2Te3, indicating the robustness of bulk Z2 topology. Most remarkably, the band engineering leads to ideal TIs with truly insulating bulk and tunable surface states across the Dirac point that behaves like one-quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new topologically insulating devices based on well-established semiconductor technology.

Date: 2011
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DOI: 10.1038/ncomms1588

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