Revealing the role of defects in ferroelectric switching with atomic resolution

Peng Gao, Christopher T. Nelson, Jacob R. Jokisaari, Seung-Hyub Baek, Chung Wung Bark, Yi Zhang, Enge Wang, Darrell G. Schlom, Chang-Beom Eom and Xiaoqing Pan ()
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Peng Gao: University of Michigan-Ann Arbor
Christopher T. Nelson: University of Michigan-Ann Arbor
Jacob R. Jokisaari: University of Michigan-Ann Arbor
Seung-Hyub Baek: University of Wisconsin-Madison
Chung Wung Bark: University of Wisconsin-Madison
Yi Zhang: University of Michigan-Ann Arbor
Enge Wang: International Center for Quantum Materials and School of Physics, Peking University
Darrell G. Schlom: Cornell University
Chang-Beom Eom: University of Wisconsin-Madison
Xiaoqing Pan: University of Michigan-Ann Arbor

Nature Communications, 2011, vol. 2, issue 1, 1-6

Abstract: Abstract Ferroelectric materials are characterized by a spontaneous polarization, which can be reoriented with an applied electric field. The switching between polarized domains is mediated by nanoscale defects. Understanding the role of defects in ferroelectric switching is critical for practical applications such as non-volatile memories. This is especially the case for ferroelectric nanostructures and thin films in which the entire switching volume is proximate to a defective surface. Here we report the nanoscale ferroelectric switching of a tetragonal PbZr0.2Ti0.8O3 thin film under an applied electric field using in situ transmission electron microscopy. We found that the intrinsic electric fields formed at ferroelectric/electrode interfaces determine the nucleation sites and growth rates of ferroelectric domains and the orientation and mobility of domain walls, whereas dislocations exert a weak pinning force on domain wall motion.

Date: 2011
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DOI: 10.1038/ncomms1600

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