Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Di Xiao (), Wenguang Zhu, Ying Ran, Naoto Nagaosa and Satoshi Okamoto ()
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Di Xiao: Oak Ridge National Laboratory
Wenguang Zhu: Oak Ridge National Laboratory
Ying Ran: Boston College
Naoto Nagaosa: The University of Tokyo
Satoshi Okamoto: Oak Ridge National Laboratory

Nature Communications, 2011, vol. 2, issue 1, 1-8

Abstract: Abstract Topological insulators are characterized by a non-trivial band topology driven by the spin-orbit coupling. To fully explore the fundamental science and application of topological insulators, material realization is indispensable. Here we predict, based on tight-binding modelling and first-principles calculations, that bilayers of perovskite-type transition-metal oxides grown along the [111] crystallographic axis are potential candidates for two-dimensional topological insulators. The topological band structure of these materials can be fine-tuned by changing dopant ions, substrates and external gate voltages. We predict that LaAuO3 bilayers have a topologically non-trivial energy gap of about 0.15 eV, which is sufficiently large to realize the quantum spin Hall effect at room temperature. Intriguing phenomena, such as fractional quantum Hall effect, associated with the nearly flat topologically non-trivial bands found in eg systems are also discussed.

Date: 2011
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DOI: 10.1038/ncomms1602

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