Tunable Dirac cone in the topological insulator Bi2-xSbxTe3-ySey

T. Arakane, T. Sato (), S. Souma, K. Kosaka, K. Nakayama, M. Komatsu, T. Takahashi, Zhi Ren, Kouji Segawa and Yoichi Ando
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T. Arakane: WPI Research Center, Advanced Institute for Materials Research, Tohoku University
T. Sato: Tohoku University
S. Souma: WPI Research Center, Advanced Institute for Materials Research, Tohoku University
K. Kosaka: Tohoku University
K. Nakayama: Tohoku University
M. Komatsu: Tohoku University
T. Takahashi: WPI Research Center, Advanced Institute for Materials Research, Tohoku University
Zhi Ren: Institute of Scientific and Industrial Research, Osaka University, Ibaraki
Kouji Segawa: Institute of Scientific and Industrial Research, Osaka University, Ibaraki
Yoichi Ando: Institute of Scientific and Industrial Research, Osaka University, Ibaraki

Nature Communications, 2012, vol. 3, issue 1, 1-5

Abstract: Abstract The three-dimensional topological insulator is a quantum state of matter characterized by an insulating bulk state and gapless Dirac cone surface states. Device applications of topological insulators require a highly insulating bulk and tunable Dirac carriers, which has so far been difficult to achieve. Here we demonstrate that Bi2-xSbxTe3-ySey is a system that simultaneously satisfies both of these requirements. For a series of compositions presenting bulk-insulating transport behaviour, angle-resolved photoemission spectroscopy reveals that the chemical potential is always located in the bulk band gap, whereas the Dirac cone dispersion changes systematically so that the Dirac point moves up in energy with increasing x, leading to a sign change of the Dirac carriers at x~0.9. Such a tunable Dirac cone opens a promising pathway to the development of novel devices based on topological insulators.

Date: 2012
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DOI: 10.1038/ncomms1639

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