Practical photon number detection with electric field-modulated silicon avalanche photodiodes

O. Thomas, Z.L. Yuan and A.J. Shields ()
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O. Thomas: Toshiba Research Europe Ltd., Cambridge Research Laboratory
Z.L. Yuan: Toshiba Research Europe Ltd., Cambridge Research Laboratory
A.J. Shields: Toshiba Research Europe Ltd., Cambridge Research Laboratory

Nature Communications, 2012, vol. 3, issue 1, 1-5

Abstract: Abstract Low-noise single-photon detection is a prerequisite for quantum information processing using photonic qubits. In particular, detectors that are able to accurately resolve the number of photons in an incident light pulse will find application in functions such as quantum teleportation and linear optics quantum computing. More generally, such a detector will allow the advantages of quantum light detection to be extended to stronger optical signals, permitting optical measurements limited only by fluctuations in the photon number of the source. Here we demonstrate a practical high-speed device, which allows the signals arising from multiple photon-induced avalanches to be precisely discriminated. We use a type of silicon avalanche photodiode in which the lateral electric field profile is strongly modulated in order to realize a spatially multiplexed detector. Clearly discerned multiphoton signals are obtained by applying sub-nanosecond voltage gates in order to restrict the detector current.

Date: 2012
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1641

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DOI: 10.1038/ncomms1641

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