Near room-temperature synthesis of transfer-free graphene films

Jinsung Kwak, Jae Hwan Chu, Jae-Kyung Choi, Soon-Dong Park, Heungseok Go, Sung Youb Kim, Kibog Park, Sung-Dae Kim, Young-Woon Kim, Euijoon Yoon, Suneel Kodambaka and Soon-Yong Kwon ()
Additional contact information
Jinsung Kwak: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology
Jae Hwan Chu: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology
Jae-Kyung Choi: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology
Soon-Dong Park: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology
Heungseok Go: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology
Sung Youb Kim: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology
Kibog Park: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology
Sung-Dae Kim: Seoul National University
Young-Woon Kim: Seoul National University
Euijoon Yoon: Seoul National University
Suneel Kodambaka: University of California Los Angeles
Soon-Yong Kwon: School of Mechanical and Advanced Materials Engineering, Ulsan National Institute of Science and Technology

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract Large-area graphene films are best synthesized via chemical vapour and/or solid deposition methods at elevated temperatures (~1,000 °C) on polycrystalline metal surfaces and later transferred onto other substrates for device applications. Here we report a new method for the synthesis of graphene films directly on SiO2/Si substrates, even plastics and glass at close to room temperature (25–160 °C). In contrast to other approaches, where graphene is deposited on top of a metal substrate, our method invokes diffusion of carbon through a diffusion couple made up of carbon-nickel/substrate to form graphene underneath the nickel film at the nickel–substrate interface. The resulting graphene layers exhibit tunable structural and optoelectronic properties by nickel grain boundary engineering and show micrometre-sized grains on SiO2 surfaces and nanometre-sized grains on plastic and glass surfaces. The ability to synthesize graphene directly on non-conducting substrates at low temperatures opens up new possibilities for the fabrication of multiple nanoelectronic devices.

Date: 2012
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/ncomms1650 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1650

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms1650

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().