Fully inorganic oxide-in-oxide ultraviolet nanocrystal light emitting devices

Sergio Brovelli (), Norberto Chiodini, Roberto Lorenzi, Alessandro Lauria, Marco Romagnoli and Alberto Paleari ()
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Sergio Brovelli: University of Milano-Bicocca
Norberto Chiodini: University of Milano-Bicocca
Roberto Lorenzi: University of Milano-Bicocca
Alessandro Lauria: University of Milano-Bicocca
Marco Romagnoli: Material Processing Center, Massachusetts Institute of Technology
Alberto Paleari: University of Milano-Bicocca

Nature Communications, 2012, vol. 3, issue 1, 1-9

Abstract: Abstract The development of integrated photonics and lab-on-a-chip platforms for environmental and biomedical diagnostics demands ultraviolet electroluminescent materials with high mechanical, chemical and environmental stability and almost complete compatibility with existing silicon technology. Here we report the realization of fully inorganic ultraviolet light-emitting diodes emitting at 390 nm with a maximum external quantum efficiency of ~0.3%, based on SnO2 nanoparticles embedded in SiO2 thin films obtained from a solution-processed method. The fabrication involves a single deposition step onto a silicon wafer followed by a thermal treatment in a controlled atmosphere. The fully inorganic architecture ensures superior mechanical robustness and optimal chemical stability in organic solvents and aqueous solutions. The versatility of the fabrication process broadens the possibility of optimizing this strategy and extending it to other nanostructured systems for designed applications, such as active components of wearable health monitors or biomedical devices.

Date: 2012
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1683

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DOI: 10.1038/ncomms1683

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