Wide bandgap tunability in complex transition metal oxides by site-specific substitution

Woo Seok Choi, Matthew F. Chisholm, David J. Singh, Taekjib Choi, Gerald E. Jellison and Ho Nyung Lee ()
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Woo Seok Choi: Oak Ridge National Laboratory
Matthew F. Chisholm: Oak Ridge National Laboratory
David J. Singh: Oak Ridge National Laboratory
Taekjib Choi: Oak Ridge National Laboratory
Gerald E. Jellison: Oak Ridge National Laboratory
Ho Nyung Lee: Oak Ridge National Laboratory

Nature Communications, 2012, vol. 3, issue 1, 1-6

Abstract: Abstract Fabricating complex transition metal oxides with a tunable bandgap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its bandgap can be narrowed by as much as 1 eV, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the bandgap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the bandgap in complex oxides for use in emerging oxide optoelectronic and energy applications.

Date: 2012
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DOI: 10.1038/ncomms1690

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