Organic transistors with high thermal stability for medical applications

Kazunori Kuribara, He Wang, Naoya Uchiyama, Kenjiro Fukuda, Tomoyuki Yokota, Ute Zschieschang, Cherno Jaye, Daniel Fischer, Hagen Klauk, Tatsuya Yamamoto, Kazuo Takimiya, Masaaki Ikeda, Hirokazu Kuwabara, Tsuyoshi Sekitani, Yueh-Lin Loo and Takao Someya ()
Additional contact information
Kazunori Kuribara: The University of Tokyo
He Wang: Princeton University
Naoya Uchiyama: The University of Tokyo
Kenjiro Fukuda: The University of Tokyo
Tomoyuki Yokota: The University of Tokyo
Ute Zschieschang: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, Stuttgart 70569, Germany.
Cherno Jaye: Material Measurement Laboratory, National Institute of Standards and Technology
Daniel Fischer: Material Measurement Laboratory, National Institute of Standards and Technology
Hagen Klauk: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, Stuttgart 70569, Germany.
Tatsuya Yamamoto: Faculty of Engineering, Hiroshima University
Kazuo Takimiya: Faculty of Engineering, Hiroshima University
Masaaki Ikeda: Nippon Kayaku Co., Ltd., Tokyo Fujimi Bldg., 1-11-2 Fujimi, Chiyoda-ku, Tokyo 102-8172, Japan.
Hirokazu Kuwabara: Nippon Kayaku Co., Ltd., Tokyo Fujimi Bldg., 1-11-2 Fujimi, Chiyoda-ku, Tokyo 102-8172, Japan.
Tsuyoshi Sekitani: The University of Tokyo
Yueh-Lin Loo: Princeton University
Takao Someya: The University of Tokyo

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm2 V−1s−1 within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.

Date: 2012
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DOI: 10.1038/ncomms1721

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