Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

Seung Sae Hong, Judy J. Cha, Desheng Kong and Yi Cui ()
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Seung Sae Hong: Stanford University
Judy J. Cha: Stanford University
Desheng Kong: Stanford University
Yi Cui: Stanford University

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×1011 cm−2. The zinc oxide-capped, antimony-doped Bi2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications.

Date: 2012
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DOI: 10.1038/ncomms1771

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