Anomalous high capacitance in a coaxial single nanowire capacitor

Zheng Liu, Yongjie Zhan, Gang Shi, Simona Moldovan, Mohamed Gharbi, Li Song, Lulu Ma, Wei Gao, Jiaqi Huang, Robert Vajtai, Florian Banhart, Pradeep Sharma, Jun Lou () and Pulickel M. Ajayan
Additional contact information
Zheng Liu: Rice University
Yongjie Zhan: Rice University
Gang Shi: Rice University
Simona Moldovan: Institut de Physique et Chimie des Matériaux, UMR 7504 CNRS, Université de Strasbourg
Mohamed Gharbi: University of Houston
Li Song: Research Center for Exotic Nanocarbons, Shinshu University
Lulu Ma: Rice University
Wei Gao: Rice University
Jiaqi Huang: Rice University
Robert Vajtai: Rice University
Florian Banhart: Institut de Physique et Chimie des Matériaux, UMR 7504 CNRS, Université de Strasbourg
Pradeep Sharma: University of Houston
Jun Lou: Rice University
Pulickel M. Ajayan: Rice University

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu2O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm−2, exceeding previous reported values for metal–insulator–metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric–metal interface, enhanced significantly at the nanoscale.

Date: 2012
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DOI: 10.1038/ncomms1833

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