Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics

S. Hertel, D. Waldmann, J. Jobst, A. Albert, M. Albrecht, S. Reshanov, A. Schöner, M. Krieger and H.B. Weber ()
Additional contact information
S. Hertel: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
D. Waldmann: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
J. Jobst: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
A. Albert: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
M. Albrecht: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
S. Reshanov: ACREO AB, Electrum 236, Isafjordsgatan 22
A. Schöner: ACREO AB, Electrum 236, Isafjordsgatan 22
M. Krieger: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg
H.B. Weber: Chair for Applied Physics, Friedrich-Alexander University Erlangen-Nuremberg

Nature Communications, 2012, vol. 3, issue 1, 1-6

Abstract: Abstract Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 104 and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.

Date: 2012
References: Add references at CitEc
Citations:

Downloads: (external link)
https://www.nature.com/articles/ncomms1955 Abstract (text/html)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms1955

Ordering information: This journal article can be ordered from
https://www.nature.com/ncomms/

DOI: 10.1038/ncomms1955

Access Statistics for this article

Nature Communications is currently edited by Nathalie Le Bot, Enda Bergin and Fiona Gillespie

More articles in Nature Communications from Nature
Bibliographic data for series maintained by Sonal Shukla () and Springer Nature Abstracting and Indexing ().