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Observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene

Ramesh G. Mani (), John Hankinson, Claire Berger and Walter A. de Heer
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Ramesh G. Mani: Georgia State University
John Hankinson: School of Physics, Georgia Institute of Technology
Claire Berger: School of Physics, Georgia Institute of Technology
Walter A. de Heer: School of Physics, Georgia Institute of Technology

Nature Communications, 2012, vol. 3, issue 1, 1-6

Abstract: Abstract Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic material to complement–or replace–silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics and spin-based quantum computing. As a result, the detection, characterization and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical response and dual microwave-induced resonances in the dc resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time and the sub-lattice degeneracy splitting at zero magnetic field.

Date: 2012
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DOI: 10.1038/ncomms1986

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