High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

Sunkook Kim, Aniruddha Konar, Wan-Sik Hwang, Jong Hak Lee, Jiyoul Lee, Jaehyun Yang, Changhoon Jung, Hyoungsub Kim, Ji-Beom Yoo, Jae-Young Choi, Yong Wan Jin, Sang Yoon Lee, Debdeep Jena (), Woong Choi () and Kinam Kim
Additional contact information
Sunkook Kim: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Aniruddha Konar: University of Notre Dame
Wan-Sik Hwang: University of Notre Dame
Jong Hak Lee: School of Advanced Materials Science and Engineering, Sungkyunkwan University
Jiyoul Lee: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Jaehyun Yang: School of Advanced Materials Science and Engineering, Sungkyunkwan University
Changhoon Jung: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Hyoungsub Kim: School of Advanced Materials Science and Engineering, Sungkyunkwan University
Ji-Beom Yoo: School of Advanced Materials Science and Engineering, Sungkyunkwan University
Jae-Young Choi: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Yong Wan Jin: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Sang Yoon Lee: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Debdeep Jena: University of Notre Dame
Woong Choi: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics
Kinam Kim: Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract Unlike graphene, the existence of bandgaps (1–2 eV) in the layered semiconductor molybdenum disulphide, combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single-layer molybdenum disulphide field-effect transistors in low-power switching devices. However, the complicated process of fabricating single-layer molybdenum disulphide with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer molybdenum disulphide field-effect transistors exhibited high mobilities (>100 cm2 V−1 s−1), near-ideal subthreshold swings (~70 mV per decade) and robust current saturation over a large voltage window. With simulations based on Shockley's long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.

Date: 2012
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DOI: 10.1038/ncomms2018

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