Fabrication of flexible and freestanding zinc chalcogenide single layers

Yongfu Sun, Zhihu Sun, Shan Gao, Hao Cheng, Qinghua Liu, Junyu Piao, Tao Yao, Changzheng Wu, Shuanglin Hu, Shiqiang Wei () and Yi Xie ()
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Yongfu Sun: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China
Zhihu Sun: National Synchrotron Radiation Laboratory, University of Science and Technology of China
Shan Gao: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China
Hao Cheng: National Synchrotron Radiation Laboratory, University of Science and Technology of China
Qinghua Liu: National Synchrotron Radiation Laboratory, University of Science and Technology of China
Junyu Piao: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China
Tao Yao: National Synchrotron Radiation Laboratory, University of Science and Technology of China
Changzheng Wu: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China
Shuanglin Hu: The Ångström Laboratory, Uppsala University
Shiqiang Wei: National Synchrotron Radiation Laboratory, University of Science and Technology of China
Yi Xie: Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China

Nature Communications, 2012, vol. 3, issue 1, 1-7

Abstract: Abstract Inorganic graphene analogues (IGAs) are a conceptually new class of materials with attractive applications in next-generation flexible and transparent nanodevices. However, their species are only limited to layered compounds, and the difficulty in extension to non-layered compounds hampers their widespread applicability. Here we report the fabrication of large-area freestanding single layers of non-layered ZnSe with four-atomic thickness, using a strategy involving a lamellar hybrid intermediate. Their surface distortion, revealed by means of synchrotron radiation X-ray absorption fine structure spectroscopy, is shown to give rise to a unique electronic structure and an excellent structural stability, thus determining an enhanced solar water splitting efficiency and photostability. The ZnSe single layers exhibit a photocurrent density of 2.14 mA cm−2 at 0.72 V versus Ag/AgCl under 300 W Xe lamp irradiation, 195 times higher than that of bulk counterpart. This work opens the door for extending atomically thick IGAs to non-layered compounds and holds promise for a wealth of innovative applications.

Date: 2012
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DOI: 10.1038/ncomms2066

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