Highly transparent nonvolatile resistive memory devices from silicon oxide and graphene

Jun Yao, Jian Lin, Yanhua Dai, Gedeng Ruan, Zheng Yan, Lei Li, Lin Zhong, Douglas Natelson () and James M. Tour ()
Additional contact information
Jun Yao: Applied Physics Program through the Department of Bioengineering
Jian Lin: Department of Mechanical Engineering and Material Science
Yanhua Dai: Department of Physics and Astronomy
Gedeng Ruan: Center for Nanoscale Science and Technology
Zheng Yan: Center for Nanoscale Science and Technology
Lei Li: Center for Nanoscale Science and Technology
Lin Zhong: Department of Electrical and Computer Engineering
Douglas Natelson: Department of Physics and Astronomy
James M. Tour: Department of Mechanical Engineering and Material Science

Nature Communications, 2012, vol. 3, issue 1, 1-8

Abstract: Abstract Transparent electronic memory would be useful in integrated transparent electronics. However, achieving such transparency produces limits in material composition, and hence, hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiOx as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, nonvolatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiOx maintains the current level as the device size decreases, underscoring their potential for high-density memory applications, and as they are two-terminal based, transitions to three-dimensional memory packages are conceivable. As glass is becoming one of the mainstays of building construction materials, and conductive displays are essential in modern handheld devices, to have increased functionality in form-fitting packages is advantageous.

Date: 2012
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:3:y:2012:i:1:d:10.1038_ncomms2110

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DOI: 10.1038/ncomms2110

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