Direct writing of electronic devices on graphene oxide by catalytic scanning probe lithography

Kun Zhang, Qiang Fu, Nan Pan, Xinxin Yu, Jinyang Liu, Yi Luo (), Xiaoping Wang (), Jinlong Yang and Jianguo Hou
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Kun Zhang: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Qiang Fu: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Nan Pan: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Xinxin Yu: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Jinyang Liu: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Yi Luo: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Xiaoping Wang: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Jinlong Yang: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China
Jianguo Hou: Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China

Nature Communications, 2012, vol. 3, issue 1, 1-6

Abstract: Abstract Reduction of graphene oxide at the nanoscale is an attractive approach to graphene-based electronics. Here we use a platinum-coated atomic force microscope tip to locally catalyse the reduction of insulating graphene oxide in the presence of hydrogen. Nanoribbons with widths ranging from 20 to 80 nm and conductivities of >104 S m−1 are successfully generated, and a field effect transistor is produced. The method involves mild operating conditions, and uses arbitrary substrates, atmospheric pressure and low temperatures (≤115 °C).

Date: 2012
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DOI: 10.1038/ncomms2200

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