Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors

David K. Kim, Yuming Lai, Benjamin T. Diroll, Christopher B. Murray and Cherie R. Kagan ()
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David K. Kim: University of Pennsylvania
Yuming Lai: University of Pennsylvania
Benjamin T. Diroll: University of Pennsylvania
Christopher B. Murray: University of Pennsylvania
Cherie R. Kagan: University of Pennsylvania

Nature Communications, 2012, vol. 3, issue 1, 1-6

Abstract: Abstract Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm2 V−1 s−1, current modulation >106 and subthreshold swing of 0.28 V dec−1. We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

Date: 2012
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DOI: 10.1038/ncomms2218

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