Probing the electronic structure at semiconductor surfaces using charge transport in nanomembranes

Weina Peng, Zlatan Aksamija, Shelley A. Scott, James J. Endres, Donald E. Savage, Irena Knezevic, Mark A. Eriksson and Max G. Lagally ()
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Weina Peng: University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA
Zlatan Aksamija: University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, USA
Shelley A. Scott: University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, USA
James J. Endres: University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, USA
Donald E. Savage: University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706, USA
Irena Knezevic: University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706, USA
Mark A. Eriksson: University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA
Max G. Lagally: University of Wisconsin-Madison, 1150 University Avenue, Madison, Wisconsin 53706, USA

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract The electrical properties of nanostructures are extremely sensitive to their surface condition. In very thin two-dimensional crystalline-semiconductor sheets, termed nanomembranes, the influence of the bulk is diminished, and the electrical conductance becomes exquisitely responsive to the structure of the surface and the type and density of defects there. Its understanding therefore requires a precise knowledge of the surface condition. Here we report measurements, using nanomembranes, that demonstrate direct charge transport through the π* band of the clean reconstructed Si(001) surface. We determine the charge carrier mobility in this band. These measurements, performed in ultra-high vacuum to create a truly clean surface, lay the foundation for a quantitative understanding of the role of extended or localized surface states, created by surface structure, defects or adsorbed atoms/molecules, in modifying charge transport through semiconductor nanostructures.

Date: 2013
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DOI: 10.1038/ncomms2350

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