A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3

Y. Z. Chen (), N. Bovet, F. Trier, D. V. Christensen, F. M. Qu, N. H. Andersen, T. Kasama, W. Zhang, R. Giraud, J. Dufouleur, T. S. Jespersen, J. R. Sun, A. Smith, J. Nygård, L. Lu, B. Büchner, B. G. Shen, S. Linderoth and N. Pryds
Additional contact information
Y. Z. Chen: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
N. Bovet: Nano-Science Center, University of Copenhagen
F. Trier: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
D. V. Christensen: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
F. M. Qu: Institute of Physics, Chinese Academy of Sciences
N. H. Andersen: Technical University of Denmark
T. Kasama: Center for Electron Nanoscopy, Technical University of Denmark
W. Zhang: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
R. Giraud: Leibniz Institute for Solid State and Materials Research, IFW Dresden
J. Dufouleur: Leibniz Institute for Solid State and Materials Research, IFW Dresden
T. S. Jespersen: Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen
J. R. Sun: Institute of Physics, Chinese Academy of Sciences
A. Smith: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
J. Nygård: Center for Quantum Devices and Nano-Science Center, Niels Bohr Institute, University of Copenhagen
L. Lu: Institute of Physics, Chinese Academy of Sciences
B. Büchner: Leibniz Institute for Solid State and Materials Research, IFW Dresden
B. G. Shen: Institute of Physics, Chinese Academy of Sciences
S. Linderoth: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark
N. Pryds: Technical University of Denmark, Risø Campus, 4000 Roskilde, Denmark

Nature Communications, 2013, vol. 4, issue 1, 1-6

Abstract: Abstract The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO3 and SrTiO3, provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm2 V-1 s-1 (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

Date: 2013
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DOI: 10.1038/ncomms2394

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