Observation of a large spin-dependent transport length in organic spin valves at room temperature

Xianmin Zhang (), Shigemi Mizukami, Takahide Kubota, Qinli Ma, Mikihiko Oogane, Hiroshi Naganuma, Yasuo Ando and Terunobu Miyazaki
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Xianmin Zhang: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
Shigemi Mizukami: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
Takahide Kubota: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
Qinli Ma: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University
Mikihiko Oogane: Tohoku University
Hiroshi Naganuma: Tohoku University
Yasuo Ando: Tohoku University
Terunobu Miyazaki: World Premier International Research Center, Advanced Institute for Materials Research, Tohoku University

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract The integration of organic semiconductors and magnetism has been a fascinating topic for fundamental scientific research and future applications in electronics, because organic semiconductors are expected to possess a large spin-dependent transport length based on weak spin–orbit coupling and weak hyperfine interaction. However, to date, this length has typically been limited to several nanometres at room temperature, and a large length has only been observed at low temperatures. Here we report on a novel organic spin valve device using C60 as the spacer layer. A magnetoresistance ratio of over 5% was observed at room temperature, which is one of the highest magnetoresistance ratios ever reported. Most importantly, a large spin-dependent transport length of approximately 110 nm was experimentally observed for the C60 layer at room temperature. These results provide insights for further understanding spin transport in organic semiconductors and may strongly advance the development of spin-based organic devices.

Date: 2013
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DOI: 10.1038/ncomms2423

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