Correction: Corrigendum: Creation of a two-dimensional electron gas at an oxide interface on silicon

J. W. Park, D. F. Bogorin, C. Cen, D. A. Felker, Y. Zhang, C. T. Nelson, C. W. Bark, C. M. Folkman, X. Q. Pan, M. S. Rzchowski, J. Levy and C. B. Eom

Nature Communications, 2013, vol. 4, issue 1, 1-1

Abstract: Nature Communications 1: Article number: 94 (2010); Published: 19 October 2010; Updated: 5 February 2013. The financial support for the work described in this Article was not fully acknowledged. The Acknowledgements should have read: We thank J. Mannhart, S. Thiel and D.G. Schlom for helpful discussions.

Date: 2013
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DOI: 10.1038/ncomms2455

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