A low-temperature method to produce highly reduced graphene oxide

Hongbin Feng, Rui Cheng, Xin Zhao, Xiangfeng Duan () and Jinghong Li ()
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Hongbin Feng: Beijing Key Laboratory for Analytical Methods and Instrumentation, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Tsinghua University
Rui Cheng: University of California
Xin Zhao: Beijing Key Laboratory for Analytical Methods and Instrumentation, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Tsinghua University
Xiangfeng Duan: California NanoSystems Institute, University of California
Jinghong Li: Beijing Key Laboratory for Analytical Methods and Instrumentation, Key Laboratory of Bioorganic Phosphorus Chemistry and Chemical Biology, Tsinghua University

Nature Communications, 2013, vol. 4, issue 1, 1-8

Abstract: Abstract Chemical reduction of graphene oxide can be used to produce large quantities of reduced graphene oxide for potential application in electronics, optoelectronics, composite materials and energy-storage devices. Here we report a highly efficient one-pot reduction of graphene oxide using a sodium-ammonia solution as the reducing agent. The solvated electrons in sodium-ammonia solution can effectively facilitate the de-oxygenation of graphene oxide and the restoration of π-conjugation to produce reduced graphene oxide samples with an oxygen content of 5.6 wt%. Electrical characterization of single reduced graphene oxide flakes demonstrates a high hole mobility of 123 cm2 Vs−1. In addition, we show that the pre-formed graphene oxide thin film can be directly reduced to form reduced graphene oxide film with a combined low sheet resistance (~350 Ω per square with ~80% transmittance). Our study demonstrates a new, low-temperature solution processing approach to high-quality graphene materials with lowest sheet resistance and highest carrier mobility.

Date: 2013
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DOI: 10.1038/ncomms2555

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