Moderate doping leads to high performance of semiconductor/insulator polymer blend transistors

Guanghao Lu, James Blakesley, Scott Himmelberger, Patrick Pingel, Johannes Frisch, Ingo Lieberwirth, Ingo Salzmann, Martin Oehzelt, Riccardo Di Pietro, Alberto Salleo, Norbert Koch () and Dieter Neher ()
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Guanghao Lu: Institut für Physik und Astronomie, Universität Potsdam
James Blakesley: Institut für Physik und Astronomie, Universität Potsdam
Scott Himmelberger: Stanford University
Patrick Pingel: Institut für Physik und Astronomie, Universität Potsdam
Johannes Frisch: Institut für Physik, Humboldt-Universität zu Berlin
Ingo Lieberwirth: Max-Planck-Institut für Polymerforschung
Ingo Salzmann: Institut für Physik, Humboldt-Universität zu Berlin
Martin Oehzelt: BESSY II, Helmholtz-Zentrum fu¨r Materialien und Energie GmbH
Riccardo Di Pietro: Institut für Physik und Astronomie, Universität Potsdam
Alberto Salleo: Stanford University
Norbert Koch: Institut für Physik, Humboldt-Universität zu Berlin
Dieter Neher: Institut für Physik und Astronomie, Universität Potsdam

Nature Communications, 2013, vol. 4, issue 1, 1-8

Abstract: Abstract Polymer transistors are being intensively developed for next-generation flexible electronics. Blends comprising a small amount of semiconducting polymer mixed into an insulating polymer matrix have simultaneously shown superior performance and environmental stability in organic field-effect transistors compared with the neat semiconductor. Here we show that such blends actually perform very poorly in the undoped state, and that mobility and on/off ratio are improved dramatically upon moderate doping. Structural investigations show that these blend layers feature nanometre-scale semiconductor domains and a vertical composition gradient. This particular morphology enables a quasi three-dimensional spatial distribution of semiconductor pathways within the insulating matrix, in which charge accumulation and depletion via a gate bias is substantially different from neat semiconductor, and where high on-current and low off-current are simultaneously realized in the stable doped state. Adding only 5 wt% of a semiconducting polymer to a polystyrene matrix, we realized an environmentally stable inverter with gain up to 60.

Date: 2013
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DOI: 10.1038/ncomms2587

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