Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

Min Sup Choi, Gwan-Hyoung Lee, Young-Jun Yu, Dae-Yeong Lee, Seung Hwan Lee, Philip Kim, James Hone () and Won Jong Yoo ()
Additional contact information
Min Sup Choi: Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University
Gwan-Hyoung Lee: Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University
Young-Jun Yu: Electronics and Telecommunications Research Institute (ETRI)
Dae-Yeong Lee: Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University
Seung Hwan Lee: Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University
Philip Kim: Columbia University
James Hone: Columbia University
Won Jong Yoo: Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University

Nature Communications, 2013, vol. 4, issue 1, 1-7

Abstract: Abstract Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.

Date: 2013
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DOI: 10.1038/ncomms2652

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